Power electronics circuits: the IGBT as a semiconductor switch

Τίτλος

Power electronics circuits: the IGBT as a semiconductor switch

Θέμα

Insulated gate bipolar transistors

Electric circuits

Semiconductors

Δημιουργός

Michael, Michael

Πηγή

Higher Technical Institute

Το πλήρες κείμενο είναι διαθέσιμο από το Υπουργείο Ενέργειας, Εμπορίου Βιομηχανίας και Τουρισμού.

Εκδότης

Library of Cyprus University of Technology

Ημερομηνία

2000

Συνεισφέρων

Marouchos, C.

Δικαιώματα

Απαγορεύεται η δημοσίευση ή αναπαραγωγή, ηλεκτρονική ή άλλη χωρίς τη γραπτή συγκατάθεση του δημιουργού και κάτοχου των πνευματικών δικαιωμάτων.

Μορφή

pdf

Γλώσσα

en

Τύπος

text

Αναγνωριστικό

EED0814

Σύνοψη

Power electronics covers device characteristics, conversion techniques and applications. It emphasizes the fundamental principles of power conversions.
The application of semiconductor devices in the electric power field has been steadily increasing, and a study of power electronics is now a feature of most electrical and electronic engineering courses.
The power semiconductor devices, such as the diode, thyristor, triac, and power transistor, are used in power applications as switching devices. The development of theory and application relies heavily on waveforms and transient responses, which distinguishes the subject of power electronics from many other engineering studies.
This project deals with the construction of power switch using an IGBT and the construction of the appropriate driving circuit.
A general approach to the semiconductors devices used in power electronic circuits, diodes, thyristors, mosfets, transistors, IGBTs and the DC chopperusing transistor is made at chapter two.
Chapter three deals with the description of the constructions in general. Also it gives the semiconductors' data for each construction.
Chapter four deals with the experimental results and comments on these.
Also general conclusions of the project are made in chapter five.